STPS80L60CY STMicroelectronics, STPS80L60CY Datasheet - Page 2

• Manufacturer Part Number: STPS80L60CY
• Description: DIODE SCHOTTKY 60V 40A MAX247
• Manufacturer: STMicroelectronics

Specifications of STPS80L60CY

• Voltage - Forward (vf) (max) @ If: 570mV @ 40A
• Current - Reverse Leakage @ Vr: 1.8mA @ 60V
• Current - Average Rectified (io) (per Diode): 40A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: MAX247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-5403-5; STPS80L60CY

STPS80L60CY
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
To evaluate the maximum conduction losses use the following equation :
P = 0.36 x I
Fig. 1: Conduction losses versus average current.
35
30
25
20
15
10
Fig. 3: Normalized avalanche power derating
versus pulse duration.
2/4
THERMAL RESISTANCES
0.001
When the diodes 1 and 2 are used simultaneously :
5
0
0.01
Symbol
Symbol
0.1
R
Tj(diode 1) = P(diode1) x R
0
R
P(W)
0.01
1
V
th (j-c)
I
th (c)
P
R
F
P
ARM
ARM p
*
*
(1µs)
(t )
10
= 0.05
F(AV)
0.1
Junction to case
* tp = 380 µs, < 2%
Reverse leakage current
Forward voltage drop
+ 0.005 x I
= 0.1
Parameter
20
1
= 0.2
IF(av)(A)
t (µs)
p
F
2
(RMS)
10
th(j-c)
30
(Per diode) + P(diode 2) x R
= 0.5
Parameter
100
=tp/T
40
Tj = 125°C
Tj = 25°C
Tj = 25 C
Tj = 125°C
Tj = 25 C
Tj = 125°C
T
= 1
tp
Tests conditions
1000
50
Fig. 2: Average forward current versus ambient
temperature ( = 0.5).
45
40
35
30
25
20
15
10
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
5
0
1
0
V
I
I
0
IF(av)(A)
F
F
0
P
R
ARM
P
= 40 A
= 80 A
ARM p
= V
(25°C)
th(c)
(t )
RRM
Per diode
Total
Coupling
25
25
50
50
Min.
Rth(j-a)=5°C/W
Rth(j-a)=Rth(j-c)
Tamb(°C)
T (°C)
j
75
75
Typ.
0.50
0.69
0.4
Value
0.70
0.50
0.3
100
100
Max.
0.57
0.56
0.78
0.77
0.9
1.8
125
125
Unit
Unit
C/W
mA
A
V
150
150