STTH1506TPI STMicroelectronics, STTH1506TPI Datasheet - Page 4

• Manufacturer Part Number: STTH1506TPI
• Description: DIODE HYP FAST TANDEM 600V TOP3I
• Manufacturer: STMicroelectronics

Specifications of STTH1506TPI

• Voltage - Forward (vf) (max) @ If: 3.6V @ 15A
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Through Hole, Radial
• Package / Case: TOP-3 Insulated
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7582-5; STTH1506TPI

STTH1506TPI
Fig. 7: Softness factor versus dI
values).
0.80
0.70
0.60
0.50
0.40
0.30
0.20
Fig. 9: Transient peak forward voltage versus
dI
16
14
12
10
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
1000
4/5
8
6
4
2
0
100
10
F
0
VFP(V)
/dt (90% confidence).
0
S factor
T =125°C
1
C(pF)
I =I
F
j
F(AV)
T =125°C
V =400V
50
I =I
j
F
R
F(AV)
100
200
150
10
200
400
dIF/dt(A/µs)
VR(V)
dIF/dt(A/µs)
250
300
600
100
350
F
/dt (typical
800
400
V
OSC
F=1MHz
T =25°C
j
=30mV
450
1000
1000
500
Fig. 8: Relative variations of dynamic parameters
versus junction temperature.
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
Fig. 10: Forward recovery time versus dI
confidence).
400
350
300
250
200
150
100
50
0
25
0
tfr(ns)
100
50
I
RM
200
S factor
dIF/dt(A/µs)
Tj(°C)
75
300
100
V =1.1 x V max.
FR
Reference: T =125°C
400
T =125°C
I =I
j
F
F
V =400V
I =I
F(AV)
R
F
/dt (90%
F
F(AV)
j
500
125