DSEC60-12A IXYS, DSEC60-12A Datasheet
DSEC60-12A
Manufacturer Part Number
DSEC60-12A
Description
DIODE HFRED 1200V 30A TO-247AD
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet
1.DSEC60-12A.pdf
(2 pages)
Specifications of DSEC60-12A
Voltage - Forward (vf) (max) @ If
2.74V @ 30A
Current - Reverse Leakage @ Vr
250µA @ 1200V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
40ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247AD
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
1200 V
Forward Voltage Drop
2.74 V
Recovery Time
40 ns
Forward Continuous Current
30 A
Max Surge Current
200 A
Reverse Current Ir
250 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
60
Ifavm, D = 0.5, Per Diode, (a)
30
@ Tc, (°c)
115
Ifrms, (a)
70
Ifsm, 10 Ms, Tvj=45°c, (a)
200
Vf, Max, Tvj =150°c, (v)
1.78
@ If, (a)
30
Trr, Typ, Tvj =25°c, (ns)
40
Irm , Typ, Tvj =100°c, (a)
8.5
@ -di/dt, (a/µs)
100
Tvjm, (°c)
175
Rthjc, Max, (k/w)
0.90
Package Style
TO-247AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSEC60-12A
Manufacturer:
TOSHIBA
Quantity:
10 000
HiPerFRED
with common cathode and soft recovery
1200
Symbol
I
I
I
E
I
T
T
T
P
M
Weight
Symbol
I
V
R
R
t
I
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
V
FRMS
FAVM
FSM
AR
R
RM
rr
VJ
VJM
stg
AS
tot
F
thJC
thCH
RSM
V
d
①
②
①
②
1200
V
Pulse Width = 5 ms, Duty Cycle < 2.0%
Pulse Width = 300 μs, Duty Cycle < 2.0%
RRM
V
Conditions
T
T
T
I
V
T
mounting torque
typical
Conditions
T
T
I
I
V
V
T
AS
F
F
C
VJ
VJ
C
VJ
VJ
VJ
A
R
R
= 30 A;
= 1 A; -di/dt = 200 A/μs;
= 115°C; rectangular, d = 0.5
= 11.5 A; L = 180 µH
= 1.25·V
= 25°C
= 30 V; T
= 100 V; I
= 45°C; t
= 25°C; non-repetitive
= 25°C V
= 150°C V
= 100°C
TM
Type
DSEC 60-12A
R
p
VJ
typ.; f = 10 kHz; repetitive
T
T
F
= 10 ms (50 Hz), sine
VJ
VJ
R
R
= 25°C
= 50 A; -di
Epitaxial Diode
= V
= V
= 150°C
= 25°C
RRM
RRM
F
/dt = 100 A/μs
typ.
Characteristic Values
0.25
40
8.5
-55...+175
-55...+150
A
0.8...1.2
Maximum Ratings
200
175
165
1.2
70
30
14
max.
1.78
2.74
11.4
250
6
0.9
1
C
K/W
K/W
Nm
mA
mJ
μA
°C
°C
°C
ns
W
A
A
A
A
V
V
A
g
A
I
V
t
TO-247 AD
A = Anode, C = Cathode, TAB = Cathode
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
• Rectifiers in switch mode power
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
• Soft reverse recovery for low EMI/RFI
• Low I
Dimensions see Outlines.pdf
FAV
rr
switching devices
and motor control circuits
supplies (SMPS)
operation
- Power dissipation within the diode
- Turn-on loss in the commutating switch
RRM
A
C
RM
RM
A
= 2x30 A
= 1200 V
=
-values
reduces:
DSEC 60-12A
40 ns
C (TAB)
1 - 2
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DSEC60-12A Summary of contents
Page 1
... Pulse Width = 5 ms, Duty Cycle < 2.0% ② Pulse Width = 300 μs, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved A C Maximum Ratings ...
Page 2
... T VJ Fig. 4 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 100°C μ 600V 60A 30A ...