DSEC60-02A IXYS, DSEC60-02A Datasheet
DSEC60-02A
Manufacturer Part Number
DSEC60-02A
Description
DIODE UFAST CC 200V 30A TO247AD
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet
1.DSEC60-02A.pdf
(2 pages)
Specifications of DSEC60-02A
Voltage - Forward (vf) (max) @ If
1.2V @ 30A
Current - Reverse Leakage @ Vr
10µA @ 200V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247AD
Vrrm, (v)
200
Ifavm, D = 0.5, Total, (a)
60
Ifavm, D = 0.5, Per Diode, (a)
30
@ Tc, (°c)
145
Ifrms, (a)
70
Ifsm, 10 Ms, Tvj=45°c, (a)
325
Vf, Max, Tvj =150°c, (v)
0.95
@ If, (a)
30
Trr, Typ, Tvj =25°c, (ns)
25
Irm , Typ, Tvj =100°c, (a)
4.0
@ -di/dt, (a/µs)
100
Tvjm, (°c)
175
Rthjc, Max, (k/w)
0.90
Package Style
TO-247AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSEC60-02A
Manufacturer:
IXYS
Quantity:
1 000
Company:
Part Number:
DSEC60-02A
Manufacturer:
IXYS
Quantity:
12 500
Company:
Part Number:
DSEC60-02AQ
Manufacturer:
IXYS
Quantity:
12 500
HiPerFRED
with common cathode and soft recovery
V
Symbol
I
I
I
E
I
T
T
T
P
M
F
Weight
Symbol
I
V
R
R
t
I
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
200
FRMS
FAVM
FSM
AR
R
RM
rr
V
VJ
VJM
stg
C
RSM
AS
tot
F
thJC
thCH
d
①
②
①
②
V
200
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
RRM
V
Conditions
T
T
T
I
V
T
mounting torque
mounting force with clip
typical
Conditions
V
V
I
I
V
V
-di
AS
F
F
C
VJ
VJ
C
R
R
A
R
R
= 30 A;
= 1 A; -di/dt = 200 A/µs;
F
= 145°C; rectangular, d = 0.5
= 3 A; L = 180 µH
= 1.5·V
= 25°C
= 30 V; T
= 100 V; I
/dt = 100 A/µs; T
= 45°C; t
= 25°C; non-repetitive
= V
= V
RRM
RRM
Type
DSEC 60-02A
TM
R
; T
; T
typ.; f = 10 kHz; repetitive
p
VJ
T
T
F
= 10 ms (50 Hz), sine
VJ
VJ
VJ
VJ
= 25°C
= 50 A;
Epitaxial Diode
= 25°C
= 150°C
= 150°C
= 25°C
VJ
= 100°C
typ.
Characteristic Values
0.25
25
-55...+175
-55...+150
A
0.8...1.2
20...120
Maximum Ratings
325
175
165
1.2
0.3
70
30
max.
0.95
1.20
200
6
0.9
10
4
C
K/W
K/W
Nm
mJ
µA
µA
°C
°C
°C
ns
W
A
N
A
A
A
A
V
V
A
g
I
V
t
TO-247 AD
A = Anode, C = Cathode, TAB = Cathode
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
• Rectifiers in switch mode power
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
• Soft reverse recovery for low EMI/RFI
• Low I
FAV
rr
switching devices
and motor control circuits
supplies (SMPS)
operation
- Power dissipation within the diode
- Turn-on loss in the commutating
RRM
switch
A
C
A
RM
RM
= 2x30 A
= 200 V
= 25 ns
-values
reduces:
DSEC 60-02A
C (TAB)
1 - 2
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DSEC60-02A Summary of contents
Page 1
... Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved A C Maximum Ratings ...
Page 2
... rec 200 400 600 A/µs 800 1000 -diF/dt Fig. 7 Recovery energy E versus -di /dt rec F IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 500 T = 100° 100 V R 400 300 200 100 0 100 A/µ ...