STPS40SM100CG STMicroelectronics, STPS40SM100CG Datasheet - Page 3

• Manufacturer Part Number: STPS40SM100CG
• Description: DIODE SCHOTTKY 100V 40A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS40SM100CG

• Voltage - Forward (vf) (max) @ If: 810mV @ 20A
• Current - Reverse Leakage @ Vr: 45µA @ 100V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

STPS40SM100C
Figure 2.
Figure 4.
Figure 6.
0.001
0.01
350
300
250
200
150
100
18
16
14
12
10
0.1
8
6
4
2
0
50
1.E-03
0
0.01
1
0
P
P
ARM
ARM p
I
M
2
(1µs)
(t )
4
0.1
δ
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration,
maximum values, per diode
=0.5
t
6
1.E-02
8
δ=0.05
1
10
I (av)(A)
F
t (µs)
p
t(s)
12
δ=0.1
14
10
1.E-01
δ=0.2
16
18
δ
100
=tp/T
δ=0.5
20
T
T
T
c
c
c
=75 °C
=125 °C
=25 °C
T
Doc ID 15525 Rev 2
22
δ=1
1.E+00
tp
1000
24
Figure 3.
Figure 5.
Figure 7.
22
20
18
16
14
12
10
1.2
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
1.E-03
1
0
0
25
Z th(j-c) /R th(j-c)
P
Single pulse
P
ARM
δ
ARM
=tp/T
(25°C)
(T j )
25
T
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case
versus pulse duration
50
tp
1.E-02
50
75
T
R
amb
T (°C)
th(j-a)
tp(s)
75
j
=15 °C/W
(°C)
100
R
1.E-01
th(j-a)
100
=R
th(j-c)
Characteristics
δ
=tp/T
125
125
T
tp
1.E+00
150
150
3/9