STTH30L06CG-TR STMicroelectronics, STTH30L06CG-TR Datasheet - Page 2

DIODE ULT FAST 600V 20A D2PAK

STTH30L06CG-TR

Manufacturer Part Number
STTH30L06CG-TR
Description
DIODE ULT FAST 600V 20A D2PAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH30L06CG-TR

Voltage - Forward (vf) (max) @ If
1.55V @ 15A
Current - Reverse Leakage @ Vr
15µA @ 600V
Current - Average Rectified (io) (per Diode)
20A
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
85ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10317-2
STTH30L06CG-TR

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STTH30L06C
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics (per diode)
Pulse test:
To evaluate the conduction losses use the following equation: P = 0.94 x I
Table 6: Dynamic Characteristics (per diode)
2/8
When the diodes 1 and 2 are used simultaneously:
Symbol
Symbol
Symbol
R
Tj(diode 1) = P(diode 1) x R
R
V
V
I
I
th(j-c)
R
RM
th(c)
F
t
t
FP
rr
fr
**
*
Junction to case
Coupling
Reverse leakage current T
Forward voltage drop
Reverse recovery
time
Reverse recovery
current
Forward recovery
time
Forward recovery
voltage
* tp = 5 ms,
** tp = 380 µs,
Parameter
Parameter
δ
< 2%
th(j-c)
δ
< 2%
(Per diode) + P(diode 2) x R
T
T
T
T
j
j
j
j
= 25°C
= 125°C I
= 25°C
= 25°C
Parameter
T
T
T
T
T
j
j
j
j
j
j
= 25°C
= 150°C
= 25°C
= 150°C
= 25°C
= 150°C
Test conditions
I
I
dI
I
V
I
V
F
F
F
F
F
FR
FR
F
= 1A dI
= 0.5A Irr = 0.25A I
= 15A
= 15A
= 15A
Test conditions
/dt = 100 A/µs
= 1.1 x V
= 1.1 x V
th(c)
V
I
I
F
F
R
F
= 15A
= 30A
dI
/dt = 50 A/µs V
V
dI
= V
F(AV)
F
R
Fmax
Fmax
F
/dt = 100 A/µs
/dt = 100 A/µs
= 400V
RRM
+ 0.017 I
Per diode
Total
R
F
Min.
2
=1A
(RMS)
R
=30V
0.95
1.15
Typ
Value (max).
40
Min. Typ Max. Unit
1.15
1.7
0.6
Max.
1.55
1.76
1.45
400
1.2
15
8.5
3.0
60
300
55
85
12
°C/W
°C/W
Unit
Unit
µA
V
ns
ns
A
V

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