STPS20H100CG STMicroelectronics, STPS20H100CG Datasheet - Page 4
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STPS20H100CG
Manufacturer Part Number
STPS20H100CG
Description
DIODE SCHOTTKY 100V 10A D2PAK
Manufacturer
STMicroelectronics
Datasheet
1.STPS20H100CT.pdf
(11 pages)
Specifications of STPS20H100CG
Voltage - Forward (vf) (max) @ If
770mV @ 10A
Current - Reverse Leakage @ Vr
4.5µA @ 100V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Rectifier Type
Schottky Diode
Configuration
Dual Common Cathode
Peak Rep Rev Volt
100V
Avg. Forward Curr (max)
20A
Rev Curr
4.5uA
Peak Non-repetitive Surge Current (max)
250A
Forward Voltage
0.88V
Operating Temp Range
-65C to 175C
Package Type
D2PAK
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STPS20H100CG-TR
Manufacturer:
STMicroelectronics
Quantity:
38 060
Part Number:
STPS20H100CG-TR
Manufacturer:
ST
Quantity:
20 000
Characteristics
4/11
Figure 1.
Figure 3.
Figure 5.
8
6
4
2
0
200
180
160
140
120
100
0.001
80
60
40
20
0.01
0
0
1E-3
P
0.1
1
F(AV)
0.01
I (A)
M
P
P
I
M
ARM
ARM p
(W)
(1µs)
2
(t )
δ
=0.5
t
0.1
Average forward power dissipation
versus average forward current (per
diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode,
TO-220AB, D
δ = 0.05
1E-2
4
1
δ = 0.1
I
F(AV)
t (µs)
p
t(s)
6
2
(A)
PAK, I
δ = 0.2
10
1E-1
8
2
PAK)
δ = 0.5
100
δ
=tp/T
10
δ = 1
T
T =125°C
T =50°C
T =75°C
C
C
C
tp
1000
1E+0
12
Figure 2.
Figure 4.
Figure 6.
10
12
140
120
100
8
6
4
2
0
80
60
40
20
1.2
0.8
0.6
0.4
0.2
1E-3
0
0
I
1
0
F(AV)
I (A)
25
M
P
I
M
δ
ARM
P
=tp/T
ARM p
(A)
R
th(j-a)
25
(25°C)
δ
=0.5
(t )
T
t
=40°C/W
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode,
TO-220FPAB)
50
tp
R
th(j-a)
50
=15°C/W
1E-2
75
75
T
amb
T (°C)
j
t(s)
R
(°C)
th(j-a)
100
=R
100
th(j-c)
1E-1
125
TO-220FPAB
STPS20H100C
125
TO-220AB
150
T =125°C
T =50°C
T =75°C
j
j
j
150
1E+0
175