STPS41H100CG-TR STMicroelectronics, STPS41H100CG-TR Datasheet - Page 3

• Manufacturer Part Number: STPS41H100CG-TR
• Description: DIODE SCHOTTKY 100V 20A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS41H100CG-TR

• Voltage - Forward (vf) (max) @ If: 800mV @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-6585-2; STPS41H100CG-TR

Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
1.E+02
1.E+01
1.E+00
300
250
200
150
100
1.E-01
1.E-02
1.E-03
1.E-04
0.01
50
1.E-03
0.1
0
0.01
1
IM(A)
P
I
M
0
P
ARM
IR(mA)
ARM p
(1µs)
10
(t )
=0.5
t
0.1
20
1.E-02
30
1
40
t (µs)
p
Tj=150°C
t(s)
Tj=100°C
Tj=125°C
Tj=75°C
Tj=50°C
Tj=25°C
50
10
60
1.E-01
VR(V)
70
100
80
Tc=25°C
Tc=75°C
Tc=125°C
90
1.E+00
1000
100
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values).
10.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.1
1.E-03
1
0
0
P
Zth(j-c)/Rth(j-c)
1
C(nF)
Single pulse
P
ARM
= 0.5
= 0.2
= 0.1
ARM p
(25°C)
(t )
25
1.E-02
50
STPS41H100CG/CT/CR
T (°C)
j
tp(s)
VR(V)
75
10
1.E-01
100
=tp/T
125
Vosc=30mV
F=1MHz
Tj=25°C
T
tp
1.E+00
150
3/6
100