STPS16H100CG-TR STMicroelectronics, STPS16H100CG-TR Datasheet - Page 3

• Manufacturer Part Number: STPS16H100CG-TR
• Description: DIODE SCHOTTKY 100V 8A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS16H100CG-TR

• Voltage - Forward (vf) (max) @ If: 770mV @ 8A
• Current - Reverse Leakage @ Vr: 3.6µA @ 100V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 5-1: Non repetitive surge peak forward current
versus
(TO-220AB, D²PAK, I²PAK).
200
180
160
140
120
100
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
D²PAK & I²PAK).
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
60
40
20
0.01
1.E-03
1.E-03
0
0.1
0.01
1
Zth(j-c) / Rth(j-c)
I (A)
M
Single pulse
= 0.5
= 0.2
= 0.1
P
I
M
P
ARM
ARM p
(1µs)
overload
(t )
=0.5
t
0.1
1.E-02
1.E-02
duration
1
t (µs)
p
t (s)
P
t(s)
10
(maximum
1.E-01
1.E-01
100
=tp/T
T
T
values)
T
T
C
C
C
=125°C
=25°C
=75°C
tp
1.E+00
1.E+00
1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 5-2: Non repetitive surge peak forward current
versus
(TO-220FPAB).
120
110
100
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220FPAB).
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
90
80
70
60
50
40
30
20
10
1.E-03
1.E-03
1
0
0
0
P
Zth(j-c) / Rth(j-c)
I (A)
M
P
ARM
= 0.5
= 0.2
= 0.1
I
M
ARM p
Single pulse
(25°C)
(t )
overload
=0.5
t
25
1.E-02
STPS16H100CT/CG/CFP/CR
1.E-02
50
duration
T (°C)
1.E-01
j
t (s)
t(s)
P
75
(maximum
1.E-01
100
1.E+00
=tp/T
125
T
T
values)
T
C
T
C
=125°C
C
=25°C
=75°C
tp
1.E+00
1.E+01
150
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