STPS15L30CB STMicroelectronics, STPS15L30CB Datasheet

DIODE SCHOTTKY 30V 7.5A DPAK

STPS15L30CB

Manufacturer Part Number
STPS15L30CB
Description
DIODE SCHOTTKY 30V 7.5A DPAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS15L30CB

Voltage - Forward (vf) (max) @ If
480mV @ 7.5A
Current - Reverse Leakage @ Vr
1mA @ 30V
Current - Average Rectified (io) (per Diode)
7.5A
Voltage - Dc Reverse (vr) (max)
30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
15 A
Max Surge Current
75 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.57 V
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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MAIN PRODUCTS CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Dual center tab Schottky rectifier suited for switch
Mode Power Supply and high frequency DC to DC
converters.
Package in DPAK, this device is intended for use
in
free-wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
* :
July 2003 - Ed : 2A
Symbol
I
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
HIGH AVALANCHE CAPABILITY
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
F(AV)
T
dPtot
RRM
FSM
RRM
ARM
Tj
dTj
low
stg
V
Tj (max)
F
V
I
voltage,
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Peak repetitive reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
Rth j
(
1
high
a
)
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
frequency
2 x 7.5 A
150 °C
0.39 V
30 V
Parameter
inverters,
Tc = 140°C
tp = 10 ms sinusoidal
tp=2 µs square F=1kHz
tp = 1µs Tj = 25°C
= 0.5
Per diode
Per device
K
A1
A2
STPS15L30CB
DPAK
A1
- 65 to + 175
10000
Value
A2
2800
K
150
7.5
30
10
15
75
1
Unit
V/µs
W
V
A
A
A
A
C
C
1/5

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STPS15L30CB Summary of contents

Page 1

... Rth July 2003 - 7 150 °C 0.39 V inverters, Parameter Tc = 140° sinusoidal tp=2 µs square F=1kHz tp = 1µ 25°C STPS15L30CB DPAK Value Unit 30 10 7.5 Per diode 15 Per device 75 1 2800 - 175 ...

Page 2

... STPS15L30CB THERMAL RESISTANCES Symbol R Junction to case th(j-c) R Coupling th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...

Page 3

... Tc=25°C 0.5 Tc=75°C 0.4 = 0.2 0.3 = 0.1 Tc=125°C 0.2 Single pulse 0.1 0.0 1.E-01 1.E+00 1.E-03 STPS15L30CB Rth(j-a)=Rth(j-c) Rth(j-a)=70°C/W T Tamb(° 100 (t ) (25°C) T (° 100 tp(s) 1.E-02 1.E-01 125 ...

Page 4

... STPS15L30CB Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 1.E+03 Tj=150°C 1.E+02 Tj=125°C 1.E+01 Tj=100°C Tj=75°C 1.E+00 Tj=50°C 1.E-01 Tj=25°C VR(V) 1.E- Fig. 9: Forward voltage drop versus forward current. IFM(A) 100 Tj=125°C Tj=125° ...

Page 5

... REF 6 1.6 Package Weight DPAK 0.30 g DPAK 0.30 g STMicroelectronics GROUP OF COMPANIES http://www.st.com STPS15L30CB DIMENSIONS Millimeters Inches Min. Max Min. Max. 2.20 2.40 0.086 0.094 0.90 1.10 0.035 0.043 0.03 0.23 0.001 0.009 0.64 0.90 0.025 0.035 5.20 5.40 0.204 0.212 ...

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