STPS640CB STMicroelectronics, STPS640CB Datasheet - Page 4

• Manufacturer Part Number: STPS640CB
• Description: DIODE SCHOTTKY 40V 3A DPAK
• Manufacturer: STMicroelectronics

Specifications of STPS640CB

• Voltage - Forward (vf) (max) @ If: 630mV @ 3A
• Current - Reverse Leakage @ Vr: 100µA @ 40V
• Current - Average Rectified (io) (per Diode): 3A
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 3 A
• Max Surge Current: 75 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.84 V @ 6 A
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Characteristics
4/9
Figure 7.
Figure 9.
Figure 11. Forward voltage drop versus
1.0
0.8
0.6
0.4
0.0
1E-2
1E-3
1E-4
1E-5
10.0
0.2
1.0
0.1
1E-3
0.0
0
Z
I (A)
R
I
th(j-c)
Single pulse
δ = 0.5
δ = 0.2
δ = 0.1
FM
(A)
0.1
/R
5
th(j-c)
0.2
Relative variation of thermal
transient impedance junction to
case versus pulse duration
(TO-220AB/DPAK)
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
forward current (maximum values,
per diode)
10
(typical values)
T =150°C
1E-2
0.3
j
15
0.4
V
V (V)
t (s)
T =150°C
T =125°C
T =100°C
T =75°C
p
FM
j
j
j
j
R
20
0.5
(V)
0.6
25
1E-1
T =25°C
j
0.7
30
δ
=tp/T
0.8
T
35
0.9
tp
1E+0
1.0
40
Figure 8.
Figure 10. Junction capacitance versus
Figure 12. Thermal resistance junction to
1.0
0.8
0.6
0.4
0.2
0.0
500
100
80
70
60
50
40
30
20
10
10
1E-3
0
1
0
Z
R
C(pF)
th(j-c)
δ = 0.5
Single pulse
th(j-a)
δ = 0.2
δ = 0.1
4
/R
(°C/W)
th(j-c)
2
8
Relative variation of thermal
impedance junction to case versus
pulse duration
(TO-220FPAB)
reverse voltage applied (typical
values, per diode)
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm)
1E-2
12
16
S(Cu)(cm²)
5
1E-1
t (s)
p
V (V)
20
R
10
24
28
1E+0
20
δ
=tp/T
32
STPS640C
V
OSC
F=1MHz
T =25°C
T
=30mV
j
36
tp
RMS
1E+1
40
50