STPS16170CB-TR STMicroelectronics, STPS16170CB-TR Datasheet - Page 3

• Manufacturer Part Number: STPS16170CB-TR
• Description: DIODE SCHOTTKY 170V 2X8A DPAK
• Manufacturer: STMicroelectronics

Specifications of STPS16170CB-TR

• Voltage - Forward (vf) (max) @ If: 920mV @ 8A
• Current - Reverse Leakage @ Vr: 15µA @ 170V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 170V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-6078-2

STPS16170C
Figure 1.
Figure 3.
Figure 5.
0.001
120
100
8
7
6
5
4
3
2
1
0
0.01
80
60
40
20
0.1
1.E-03
0
0
1
0.01
P
P
ARM
ARM p
I
M
1
(1µs)
(t )
2
δ
Conduction losses versus average
forward current (per diode)
Normalized avalanche power
derating versus pulse duration
0.1
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
=0.5
t
3
1.E-02
δ=0.05
4
1
I
F(AV)
t (µs)
p
t(s)
5
(A)
δ=0.1
6
10
1.E-01
δ=0.2
7
δ
δ=0.5
100
=tp/T
8
T
T
C
T
T
C
=125°C
=75°C
C
9
=50°C
δ=1
1.E+00
tp
1000
10
Figure 2.
Figure 4.
Figure 6.
9
8
7
6
5
4
3
2
1
0
1.0
0.1
1.2
0.8
0.6
0.4
0.2
1.E-03
0
1
0
I
F(av)
25
P
δ
=tp/T
P
ARM
Single pulse
TO-220AB
(A)
ARM p
D²PAK
DPAK
I²PAK
25
(25°C)
T
(t )
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse duration
tp
50
50
1.E-02
75
75
T amb (°C)
Rth(j-a)=15°C/W
tp(s)
T (°C)
j
100
100
1.E-01
Rth(j-a)=Rth(j-c)
125
Characteristics
125
150
1.E+00
175
150
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