STPS10170CB-TR STMicroelectronics, STPS10170CB-TR Datasheet - Page 3

• Manufacturer Part Number: STPS10170CB-TR
• Description: DIODE SCHOTTKY 170V 2X5A DPAK
• Manufacturer: STMicroelectronics

Specifications of STPS10170CB-TR

• Voltage - Forward (vf) (max) @ If: 920mV @ 5A
• Current - Reverse Leakage @ Vr: 10µA @ 170V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 170V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-6075-2

STPS10170C
Figure 1.
Figure 3.
Figure 5.
0.001
5
4
3
2
1
0
0.01
80
70
60
50
40
30
20
10
1.E-03
0.1
0
0
1
0.01
P
P
ARM
ARM p
I
M
(1µs)
(t )
1
δ
Conduction losses versus average
forward current (per diode)
Normalized avalanche power
derating versus pulse duration
0.1
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
=0.5
t
δ=0.05
1.E-02
2
1
δ=0.1
t (µs)
p
I
F(AV)
t(s)
3
(A)
δ=0.2
10
1.E-01
4
δ=0.5
δ
100
=tp/T
5
T
T
T
C
C
=125°C
T
C
=50°C
=75°C
δ=1
1.E+00
tp
1000
6
Figure 2.
Figure 4.
Figure 6.
1.0
0.1
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
0.8
0.6
0.4
0.2
1.E-03
1
0
0
25
P
P
ARM
δ
Single pulse
TO-220AB
=tp/T
ARM p
D²PAK
DPAK
I²PAK
(25°C)
25
(t )
T
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance, junction to case versus
pulse duration
50
tp
50
1.E-02
75
75
T
tp(s)
T (°C)
amb
j
(°C)
100
100
R
th(j-a)
1.E-01
=15°C/W
125
Characteristics
R
th(j-a)
125
=R
th(j-c)
150
1.E+00
175
150
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