BYQ28ED-200,118 NXP Semiconductors, BYQ28ED-200,118 Datasheet - Page 5

• Manufacturer Part Number: BYQ28ED-200,118
• Description: DIODE RECT 200V 10A SOT428
• Manufacturer: NXP Semiconductors

Specifications of BYQ28ED-200,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Voltage - Forward (vf) (max) @ If: 1.25V @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 25 ns
• Forward Continuous Current: 10 A
• Max Surge Current: 55 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054886118; BYQ28ED-200 /T3; BYQ28ED-200 /T3

NXP Semiconductors
BYQ28_SER_E_ED_4
Product data sheet
Fig 3. Reverse recovery definitions
Fig 5. Forward power dissipation as a function of
I
I
R
F
P
(W)
tot
8
6
4
2
0
I
average forward current; square waveform;
maximum values
F(AV)
0
dl
dt
= I
F
F(RMS)
I
RM
Q
2
0.1
r
0.2
t
rr
4
0.5
6
I
F(AV)
001aag976
= 1
(A)
Rev. 04 — 5 December 2007
001aab911
10 %
8
time
100 %
Fig 4. Forward recovery definitions
Fig 6. Forward power dissipation as a function of
V
I
F
F
P
(W)
BYQ28 series E and ED
tot
6
4
2
0
a = form factor = I
average forward current; sinusoidal waveform;
maximum values
0
4.0
Rectifier diodes ultrafast, rugged
2
F(RMS)
2.8
2.2
/ I
F(AV)
1.9
4
a = 1.57
I
F(AV)
© NXP B.V. 2007. All rights reserved.
001aag977
(A)
V
F
6
001aab912
time
time
5 of 10
V
FR