BAW101S,115 NXP Semiconductors, BAW101S,115 Datasheet - Page 2

• Manufacturer Part Number: BAW101S,115
• Description: DIODE DUAL 300V 250MA SOT-363
• Manufacturer: NXP Semiconductors

Specifications of BAW101S,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 150nA @ 250V
• Current - Average Rectified (io) (per Diode): 250mA (DC)
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Anti Parallel
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.1 V at 0.1 A
• Recovery Time: 50 ns
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4.5 A
• Reverse Current Ir: 50 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057353115; BAW101S T/R; BAW101S T/R

NXP Semiconductors
FEATURES
• Small plastic SMD package
• High switching speed: max. 50 ns
• High continuous reverse voltage: 300 V
• Electrically insulated diodes.
APPLICATIONS
• High voltage switching
• Automotive
• Communication.
DESCRIPTION
The BAW101S is a high-speed switching diode array with
two separate dice, fabricated in planar technology and
encapsulated in a small SOT363 plastic SMD package.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
2003 May 13
BAW101S
High voltage double diode
∗ = t: Made in Malaysia.
∗ = W: Made in China.
TYPE NUMBER
MARKING CODE
K2∗
(1)
2
PINNING
handbook, halfpage
Fig.1
Top view
PIN
1
2
3
4
5
6
1
6
Simplified outline (SOT363) and symbol.
2
5
anode 1
n.c.
cathode 2
anode 2
n.c.
cathode 1
4
3
MBL892
DESCRIPTION
Product data sheet
6
1
BAW101S
5
2
4
3