BAT721A,215 NXP Semiconductors, BAT721A,215 Datasheet - Page 3
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BAT721A,215
Manufacturer Part Number
BAT721A,215
Description
DIODE SCHOTTKY 40V 200MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BAT721A235.pdf
(11 pages)
Specifications of BAT721A,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
550mV @ 200mA
Current - Reverse Leakage @ Vr
15µA @ 30V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
40V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.2 A
Max Surge Current
1 A
Configuration
Dual Common Anode
Forward Voltage Drop
0.55 V
Maximum Reverse Leakage Current
15 uA @ 30 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-3418-2
934054928215
BAT721A T/R
934054928215
BAT721A T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAT721A,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
1PS76SB21_BAT721_SER_6
Product data sheet
Table 4.
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Type number
1PS76SB21
BAT721
BAT721A
BAT721C
BAT721S
Type number
1PS76SB21
BAT721
BAT721A
BAT721C
BAT721S
Symbol
Per diode
V
I
I
T
T
T
F
FSM
j
amb
stg
R
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Ordering information
Marking codes
Limiting values
Parameter
reverse voltage
forward current
non-repetitive peak forward
current
junction temperature
ambient temperature
storage temperature
Package
Name
SC-76
-
Rev. 06 — 21 December 2006
Description
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 3 leads
1PS76SB21; BAT721 series
Conditions
half sine wave;
JEDEC method;
t
p
= 8.3 ms
Schottky barrier diodes in small packages
Marking code
S1
L7*
L8*
L9*
L0*
[1]
Min
-
-
-
-
65
65
© NXP B.V. 2006. All rights reserved.
Max
40
200
1
125
+150
+150
Version
SOD323
SOT23
Unit
V
mA
A
C
C
C
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