BAV99S,115 NXP Semiconductors, BAV99S,115 Datasheet - Page 6

• Manufacturer Part Number: BAV99S,115
• Description: DIODE ARRAY 100V 200MA H-S SC-88
• Manufacturer: NXP Semiconductors

Specifications of BAV99S,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4 A
• Configuration: Double Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: - 65 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-4507-2; 934056610115; BAV99S T/R; BAV99S T/R

Philips Semiconductors
2001 May 14
handbook, full pagewidth
High-speed switching diode array
(1) I
Input signal: forward pulse rise time t
V = V
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
R
R = 50
R = 50
S
= 1 mA.
S
R
I
I x R
F
S
1 k
D.U.T.
r
= 0.35 ns.
I F
450
Fig.7 Reverse recovery voltage test circuit and waveforms.
Fig.8 Forward recovery voltage test circuit and waveforms.
D.U.T.
r
= 20 ns; forward current pulse duration t
OSCILLOSCOPE
r
= 0.6 ns; reverse voltage pulse duration t
MGA882
R = 50
i
OSCILLOSCOPE
SAMPLING
R = 50
MGA881
i
V R
I
6
10%
t r
10%
p
t r
90%
100 ns; duty factor
90%
p
= 100 ns; duty factor
input signal
signal
input
t p
t p
0.005.
= 0.05.
t
t
V
I F
V fr
output signal
Product specification
output
signal
BAV99S
t rr
(1)
t
t