BAS31,235 NXP Semiconductors, BAS31,235 Datasheet - Page 5

• Manufacturer Part Number: BAS31,235
• Description: DIODE AVAL SW 90V 250MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS31,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 900mV @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 90V
• Current - Average Rectified (io) (per Diode): 250mA (DC)
• Voltage - Dc Reverse (vr) (max): 90V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Avalanche
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: General Purpose Diodes
• Peak Reverse Voltage: 110 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 10 A
• Configuration: Dual Series
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933723190235; BAS31 /T3; BAS31 /T3

NXP Semiconductors
GRAPHICAL DATA
2003 Mar 20
handbook, halfpage
handbook, full pagewidth
General purpose controlled avalanche
(double) diodes
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
Based on square wave currents.
T
j
I FSM
(mA)
= 25 °C prior to surge.
(A)
I F
10
300
200
100
10
10
−1
0
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
(1)
(2)
100
10
T amb (
o
C)
MBG440
200
10
5
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
IF
600
400
200
j
j
j
0
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage.
BAS29; BAS31; BAS35
(1)
10
3
(2)
1
(3)
t p (µs)
V F (V)
Product data sheet
MBH280
MBH327
10
2
4