BAS31,235 NXP Semiconductors, BAS31,235 Datasheet - Page 4

DIODE AVAL SW 90V 250MA SOT-23

BAS31,235

Manufacturer Part Number
BAS31,235
Description
DIODE AVAL SW 90V 250MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS31,235

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
900mV @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 90V
Current - Average Rectified (io) (per Diode)
250mA (DC)
Voltage - Dc Reverse (vr) (max)
90V
Reverse Recovery Time (trr)
50ns
Diode Type
Avalanche
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
General Purpose Diodes
Peak Reverse Voltage
110 V
Forward Continuous Current
0.25 A
Max Surge Current
10 A
Configuration
Dual Series
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933723190235
BAS31 /T3
BAS31 /T3
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
Per diode
V
I
V
C
t
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C unless otherwise specified.
F
(BR)R
General purpose controlled avalanche
(double) diodes
d
th j-tp
th j-a
forward voltage
reverse current
reverse avalanche breakdown
voltage
diode capacitance
reverse recovery time
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
I
f = 1 MHz; V
when switched from I
I
at I
R
R
I
I
I
I
I
V
V
= 1 mA
= 30 mA; R
F
F
F
F
F
R
R
R
= 10 mA
= 50 mA
= 100 mA
= 200 mA
= 400 mA
= 3 mA; see Fig.7
= 90 V
= 90 V; T
note 1
4
CONDITIONS
R
L
= 0; see Fig.6
j
= 100 Ω; measured
= 150 °C
CONDITIONS
F
= 30 mA to
BAS29; BAS31; BAS35
120
MIN.
750
840
900
1
1.25
100
100
170
35
50
VALUE
Product data sheet
MAX.
360
500
mV
mV
mV
V
V
nA
µA
V
pF
ns
UNIT
UNIT
K/W
K/W

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