BAS21AW,115 NXP Semiconductors, BAS21AW,115 Datasheet - Page 9

• Manufacturer Part Number: BAS21AW,115
• Description: DIODE SW 200V 200MA HS UMT3
• Manufacturer: NXP Semiconductors

Specifications of BAS21AW,115

• Package / Case: SC-70-3, SOT-323-3
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Current - Average Rectified (io) (per Diode): 125mA (DC)
• Voltage - Dc Reverse (vr) (max): 250V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 125 mA
• Max Surge Current: 625 mA
• Configuration: Dual Common Anode
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 nA
• Maximum Power Dissipation: 200 mW
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Diode Capacitance: 2 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063269115

NXP Semiconductors
12. Revision history
Table 10.
BAS21W_SER_1
Product data sheet
Document ID
BAS21W_SER_1
Revision history
Release date
20091009
Data sheet status
Product data sheet
Rev. 01 — 9 October 2009
Change notice
-
BAS21W series
High-voltage switching diodes
Supersedes
-
© NXP B.V. 2009. All rights reserved.
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