BAV70S,115 NXP Semiconductors, BAV70S,115 Datasheet - Page 6
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BAV70S,115
Manufacturer Part Number
BAV70S,115
Description
DIODE ARRAY 100V 250MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BAV70235.pdf
(15 pages)
Specifications of BAV70S,115
Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
500nA @ 80V
Current - Average Rectified (io) (per Diode)
250mA (DC)
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Pair Common Cathode
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.25 A
Max Surge Current
4 A
Configuration
Double Dual Common Cathode
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-5004-2
934045740115
BAV70S T/R
BAV70S T/R
BAV70S,115
934045740115
BAV70S T/R
BAV70S T/R
BAV70S,115
NXP Semiconductors
BAV70_SER_7
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Reverse current as a function of reverse
(mA)
(1) T
(2) T
(3) T
(4) T
( A)
(1) T
(2) T
(3) T
(4) T
I
I
10
10
10
10
10
10
R
F
10
10
10
10
10
1
1
3
2
1
2
1
2
3
4
5
voltage; typical values
voltage; typical values
0.2
0
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
(1)
20
(2)
0.6
(1)
(2)
(3)
(4)
(3)
40
(4)
60
1.0
V
80
F
006aab107
006aab108
(V)
V
R
(V)
Rev. 07 — 27 November 2007
100
1.4
Fig 2. Non-repetitive peak forward current as a
Fig 4. Diode capacitance as a function of reverse
I
FSM
(A)
(pF )
10
C
10
0.8
0.6
0.4
0.2
10
d
1
0
2
1
Based on square wave currents.
T
function of pulse duration; maximum values
f = 1 MHz; T
voltage; typical values
1
0
j
= 25 C; prior to surge
10
4
amb
= 25 C
High-speed switching diodes
10
BAV70 series
8
2
10
12
© NXP B.V. 2007. All rights reserved.
3
t
V
p
R
( s)
mbg704
mbg446
(V)
10
16
4
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