BAS101S,215 NXP Semiconductors, BAS101S,215 Datasheet - Page 7
![DIODE SW HI-VOLT DUAL SOT-23](/photos/5/24/52425/nxp_sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
BAS101S,215
Manufacturer Part Number
BAS101S,215
Description
DIODE SW HI-VOLT DUAL SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BAS101S215.pdf
(11 pages)
Specifications of BAS101S,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
150nA @ 250V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
300V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
100 mA
Max Surge Current
1 A
Configuration
Dual
Recovery Time
50 ns
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
150 nA
Maximum Power Dissipation
250 mW
Operating Temperature Range
- 65 C to + 150 C
Maximum Diode Capacitance
2 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934060849215
NXP Semiconductors
11. Soldering
BAS101_BAS101S_2
Product data sheet
Fig 7.
Fig 8.
4.60
4.00
Dimensions in mm
Reflow soldering footprint SOT23 (TO-236AB)
Dimensions in mm
Wave soldering footprint SOT23 (TO-236AB)
1.20
3.00
0.85
0.85
1.30
Rev. 02 — 14 December 2009
2
2
3.40
2.80
4.50
3
1.00
2.90
2.50
3.30
3
1.20 (2x)
0.50 (3x)
1
0.60 (3x)
1
MSA439
0.60
(3x)
BAS101; BAS101S
2.70
preferred transport direction during soldering
High-voltage switching diodes
solder lands
solder resist
occupied area
solder lands
solder resist
occupied area
solder paste
© NXP B.V. 2009. All rights reserved.
MSA427
7 of 11