BAV99S,135 NXP Semiconductors, BAV99S,135 Datasheet - Page 3

DIODE ARRAY 100V 200MA HS SOT363

BAV99S,135

Manufacturer Part Number
BAV99S,135
Description
DIODE ARRAY 100V 200MA HS SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV99S,135

Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Pair Series Connection
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.2 A
Max Surge Current
4.5 A
Configuration
Double Dual Series
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
- 65 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056610135
BAV99S /T3
BAV99S /T3
NXP Semiconductors
5. Limiting values
BAV99_SER
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
Symbol
Per diode
V
V
I
I
I
P
T
T
Per device
T
F
FRM
FSM
j
amb
stg
RRM
R
tot
Single diode loaded.
Double diode loaded.
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Soldering points at pins 2, 3, 5 and 6.
j
= 25 °C prior to surge.
Limiting values
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
BAV99
BAV99S
BAV99W
BAV99
BAV99S
BAV99W
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 November 2010
Conditions
square wave
T
T
T
amb
sp
amb
t
t
t
p
p
p
≤ 85 °C
= 1 μs
= 1 ms
= 1 s
≤ 25 °C
≤ 25 °C
[1][4]
High-speed switching diodes
[1]
[2]
[1]
[1]
[2]
[3]
[5]
BAV99 series
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
−65
−65
© NXP B.V. 2010. All rights reserved.
Max
100
100
215
125
200
150
130
500
4
1
0.5
250
250
200
150
+150
+150
Unit
V
V
mA
mA
mA
mA
mA
mA
A
A
A
mW
mW
mW
°C
°C
°C
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