BAV23,235 NXP Semiconductors, BAV23,235 Datasheet - Page 6

• Manufacturer Part Number: BAV23,235
• Description: DIODE G-P DUAL 200V 225MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BAV23,235

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Current - Average Rectified (io) (per Diode): 225mA (DC)
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 0.225 A
• Max Surge Current: 9 A
• Configuration: Dual Parallel
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933720770235; BAV23 /T3; BAV23 /T3

NXP Semiconductors
8. Test information
BAV23_SER_7
Product data sheet
Fig 4.
Fig 6.
(pF)
V = V
(1) I
C
1.0
0.8
0.6
0.4
0.2
d
R
S
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
Reverse recovery time test circuit and waveforms
0
R
R
= 50
+ I
= 1 mA
F
Ω
×
R
S
2
amb
= 25 C
I
4
F
D.U.T.
6
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
V
mga881
R
SAMPLING
mbg447
R
(V)
i
= 50
Rev. 07 — 19 March 2010
8
Ω
V
R
Fig 5.
t
10 %
r
(mA)
I
(1) Single diode loaded.
(2) Double diode loaded.
90 %
F
300
200
100
0
input signal
0
FR4 PCB, standard footprint
Forward current as a function of ambient
temperature; derating curves
t
p
(1)
(2)
Dual high-voltage switching diodes
50
t
100
BAV23 series
+ I
F
output signal
150
© NXP B.V. 2010. All rights reserved.
T
amb
006aab214
t rr
(°C)
200
(1)
t
6 of 13