BAV23C,215 NXP Semiconductors, BAV23C,215 Datasheet - Page 4
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BAV23C,215
Manufacturer Part Number
BAV23C,215
Description
DIODE SW HI-VOLT DUAL SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BAV23215.pdf
(13 pages)
Specifications of BAV23C,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Current - Reverse Leakage @ Vr
100nA @ 200V
Current - Average Rectified (io) (per Diode)
225mA (DC)
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
125 mA
Max Surge Current
625 mA
Configuration
Dual Common Cathode
Recovery Time
50 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
250 mW
Operating Temperature Range
- 65 C to + 150 C
Maximum Diode Capacitance
2 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061767215
NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAV23_SER_7
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 7.
[1]
Table 8.
T
[1]
Symbol
Per device
P
T
Symbol
Symbol
I
t
T
T
Per device
R
R
Per diode
V
C
R
rr
amb
j
amb
stg
tot
F
th(j-a)
th(j-sp)
d
Single diode loaded.
Double diode loaded.
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
When switched from I
= 25
j
= 25 C prior to surge.
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
Limiting values
Thermal characteristics
Characteristics
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
All information provided in this document is subject to legal disclaimers.
F
Rev. 07 — 19 March 2010
= 10 mA to I
…continued
R
= 10 mA; R
I
V
f = 1 MHz; V
Conditions
I
V
F
F
R
R
= 100 mA
= 200 mA
= 200 V
= 200 V; T
Conditions
T
Conditions
in free air
amb
L
= 100 ; measured at I
25 C
R
j
= 0 V
= 150 C
Dual high-voltage switching diodes
[4]
[1]
[1]
BAV23 series
Min
-
-
65
65
Min
-
-
Min
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
Typ
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
250
150
+150
+150
Max
500
360
Max
1.0
1.25
100
100
2
50
Unit
mW
C
C
C
Unit
K/W
K/W
Unit
V
V
nA
A
pF
ns
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