BAV199,215 NXP Semiconductors, BAV199,215 Datasheet - Page 5

• Manufacturer Part Number: BAV199,215
• Description: DIODE SW DBL 75V 160MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAV199,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Current - Average Rectified (io) (per Diode): 160mA (DC)
• Voltage - Dc Reverse (vr) (max): 75V
• Reverse Recovery Time (trr): 3µs
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Standard Recovery Rectifier
• Configuration: Dual Series
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 3000 ns
• Forward Continuous Current: 0.16 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.005 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1619-2; 934032640215; BAV199 T/R

NXP Semiconductors
2001 Oct 12
handbook, halfpage
handbook, full pagewidth
Low-leakage double diode
V
(1) Maximum values.
(2) Typical values.
Fig.5
R
(nA)
I R
10
10
10
V = V
10
= 75 V.
10
1
2
1
2
3
R = 50
S
0
R
Reverse current as a function of junction
temperature; per diode.
I x R
F
Ω
S
(1)
(2)
50
100
I F
D.U.T.
Fig.7 Reverse recovery time test circuit and waveforms.
150
OSCILLOSCOPE
T ( C)
j
SAMPLING
R = 50
MLB754
MGA881
o
i
200
Ω
V R
5
handbook, halfpage
10%
t r
f = 1 MHz; T
Fig.6
90%
(pF)
C d
input signal
2
1
0
0
t p
Diode capacitance as a function of reverse
voltage; per diode; typical values.
j
= 25 °C.
5
t
10
I F
output signal
15
Product data sheet
V R (V)
t rr
BAV199
MBG526
20
(1)
t