BAT54A,235 NXP Semiconductors, BAT54A,235 Datasheet - Page 4

• Manufacturer Part Number: BAT54A,235
• Description: DIODE SCHTK DUAL 30V 200MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAT54A,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Anode
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933976360235; BAT54A /T3; BAT54A /T3

handbook, halfpage
NXP Semiconductors
2002 Mar 04
handbook, halfpage
Schottky barrier (double) diodes
(mA)
(1) T
(2) T
(3) T
Fig.3
f = 1 MHz; T
Fig.5
I F
10
(pF)
C d
10
10
10
15
10
1
5
0
amb
amb
amb
3
2
1
0
0
(1)
= 125 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
(2)
= 25 °C.
(3)
10
0.4
(1)
(2)
20
0.8
(3)
V R (V)
V F (V)
MSA891
MSA892
30
1.2
4
handbook, halfpage
(1) T
(2) T
(3) T
Fig.4
I F
I R
(μA)
I
10
R
10
10
10
amb
amb
amb
1
3
2
1
0
= 125 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
Fig.6 Reverse recovery definitions.
dI
dt
F
Q
r
10
t f
BAT54 series
20
Product data sheet
V
R
(1)
(2)
(3)
(V)
MSA893
MRC129 - 1
10%
90%
30
t