BAV99,215 NXP Semiconductors, BAV99,215 Datasheet - Page 4

• Manufacturer Part Number: BAV99,215
• Description: DIODE SW DBL 75V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAV99,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1624-2; 933215370215; BAV99 T/R

Philips Semiconductors
GRAPHICAL DATA
2001 Oct 15
handbook, full pagewidth
High-speed double diode
Device mounted on an FR4 printed-circuit board.
Fig.2
Based on square wave currents.
T
j
I FSM
= 25 C prior to surge.
(A)
(mA)
10
10
I F
10
300
200
100
1
2
1
0
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
0
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
100
single diode loaded
double diode loaded
10
T
amb
( C)
o
MBD033
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
300
200
100
I F
j
j
j
= 150 C; typical values.
= 25 C; typical values.
= 25 C; maximum values.
0
0
Forward current as a function of forward
voltage.
10
3
(1)
1
(2)
t p ( s)
Product specification
V F (V)
(3)
MBG704
MBG382
BAV99
10
4
2