BAV99,215 NXP Semiconductors, BAV99,215 Datasheet - Page 3

• Manufacturer Part Number: BAV99,215
• Description: DIODE SW DBL 75V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAV99,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1624-2; 933215370215; BAV99 T/R

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
2001 Oct 15
Per diode
V
I
C
t
V
R
R
j
R
rr
SYMBOL
SYMBOL
F
fr
= 25 C unless otherwise specified.
d
th j-tp
th j-a
High-speed double diode
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
at I
when switched from I
t
R
r
= 20 ns; see Fig.8
I
I
I
I
V
V
V
V
= 10 mA; R
F
F
F
F
R
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 1 mA; see Fig.7
= 25 V
= 75 V
= 25 V; T
= 75 V; T
3
note 1
CONDITIONS
R
L
= 0; see Fig.6
j
j
= 100 ; measured
CONDITIONS
= 150 C
= 150 C
F
F
= 10 mA to
= 10 mA;
715
855
1
1.25
30
1
30
50
1.5
4
1.75
VALUE
MAX.
360
500
Product specification
mV
mV
V
V
nA
pF
ns
V
A
A
A
BAV99
UNIT
UNIT
K/W
K/W