BAV74,235 NXP Semiconductors, BAV74,235 Datasheet - Page 4

• Manufacturer Part Number: BAV74,235
• Description: DIODE DUAL 50V 215MA H-S SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAV74,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 50V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Common Cathode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1 V @ 0.1 A
• Maximum Reverse Leakage Current: 0.1 uA @ 50 V
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933700010235; BAV74 /T3; BAV74 /T3

NXP Semiconductors
GRAPHICAL DATA
2004 Jan 14
handbook, full pagewidth
High-speed double diode
Device mounted on an FR4 printed-circuit board.
Fig.2
Based on square wave currents.
T
Fig.4
j
I FSM
= 25 °C prior to surge.
(A)
(mA)
10
10
I F
10
−1
300
200
100
1
2
1
0
Maximum permissible continuous forward
current as a function of ambient
temperature.
Maximum permissible non-repetitive peak forward current as a function of pulse duration.
0
100
single diode loaded
double diode loaded
10
T
amb
( C)
o
MBD033
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
300
200
100
j
j
j
I F
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
0
Forward current as a function of forward
voltage.
10
3
(1)
1
(2)
t p (µs)
(3)
V F (V)
Product data sheet
MBG704
MBG383
BAV74
10
4
2