MBR3045CT Vishay, MBR3045CT Datasheet

DIODE SCHOTTKY 45V 15A TO-220AB

MBR3045CT

Manufacturer Part Number
MBR3045CT
Description
DIODE SCHOTTKY 45V 15A TO-220AB
Manufacturer
Vishay
Datasheets

Specifications of MBR3045CT

Voltage - Forward (vf) (max) @ If
760mV @ 30A
Current - Reverse Leakage @ Vr
1mA @ 45V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
30 A
Max Surge Current
200 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.76 V
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
Other names
*MBR3045CT
VS-MBR3045CT
VS-MBR3045CT
VSMBR3045CT
VSMBR3045CT

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Revision: 26-Aug-11
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
V
I
I
V
T
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
Peak repetitive forward current per leg
Non-repetitive peak surge current
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
F(AV)
FRM
FSM
J
RRM
F
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Diode variation
TO-220AB
Package
I
T
RM
V
J
I
F
F(AV)
E
V
max.
at I
max.
AS
R
www.vishay.com
F
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
per device
per leg
Rectangular waveform (per device)
T
t
20 A
Range
p
C
Anode
= 5 μs sine
= 123 °C (per leg)
See Electrical table
Common cathode
pk
100 mA at 125 °C
Schottky Rectifier, 2 x 15 A
common
cathode
, T
Base
SYMBOL
SYMBOL
TO-220AB
1
J
V
2 x 15 A
I
I
I
150 °C
E
F(AV)
10 mJ
= 125 °C
RWM
FRM
FSM
V
I
Common
AR
cathode
45 V
AS
CHARACTERISTICS
R
2
2
VS-MBR3045CTPbF, VS-MBR3045CT-N3
T
Rated V
5 µs sine or 3 µs rect. pulse
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
T
Current decaying linearly to zero in 1 μs
Frequency limited by T
3
C
J
Anode
VS-MBR3045CTPbF
= 25 °C, I
= 123 °C, rated V
R
, square wave, 20 kHz, T
45
AS
1
= 2 A, L = 5 mH
TEST CONDITIONS
FEATURES
• 150 °C T
• Low forward voltage drop
• High frequency operation
• High
• Guard ring for enhanced ruggedness and long
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
R
encapsulation
strength and moisture resistance
term reliability
(-N3 only)
J
maximum V
purity,
Following any rated load
condition and with rated
V
J
RRM
www.vishay.com/doc?91000
VS-MBR3045CT-N3
operation
C
applied
= 123 °C
A
- 65 to 150
VALUES
= 1.5 x V
35/45
1020
for
high
0.6
45
30
30
Vishay Semiconductors
enhanced
R
typical
temperature
DiodesEurope@vishay.com
Document Number: 94292
VALUES
mechanical
1020
200
15
30
30
10
2
epoxy
UNITS
UNITS
°C
V
A
V
A
V
UNITS
mJ
A
A

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