MBR2045CTG ON Semiconductor, MBR2045CTG Datasheet - Page 6
![DIODE SCHOTTKY 45V 10A TO220AB](/photos/5/30/53087/488-to-220ab_sml.jpg)
MBR2045CTG
Manufacturer Part Number
MBR2045CTG
Description
DIODE SCHOTTKY 45V 10A TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Specifications of MBR2045CTG
Voltage - Forward (vf) (max) @ If
570mV @ 10A
Current - Reverse Leakage @ Vr
100µA @ 45V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
20 A
Max Surge Current
150 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.84 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
Through Hole
Current, Forward
20 A
Current, Reverse
10.4 mA
Current, Surge
150 A
Package Type
TO-220AB
Primary Type
Schottky Barrier
Resistance, Thermal, Junction To Case
2 °C/W
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-65 to +175 °C
Voltage, Forward
0.71 V
Voltage, Reverse
45 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR2045CTGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR2045CTG
Manufacturer:
TOSHIBA
Quantity:
5 000
Part Number:
MBR2045CTG
Manufacturer:
ON/安森美
Quantity:
20 000
majority carrier conduction, it is not subject to junction di-
ode forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit ana-
lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 12.)
tion will be satisfactory up to several megahertz. For ex-
ample, relative waveform rectification efficiency is ap-
proximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction di-
odes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
Since current flow in a Schottky rectifier is the result of
Rectification efficiency measurements show that opera-
HIGH FREQUENCY OPERATION
Figure 13. Test Circuit for dv/dt and Reverse Surge Current
2.0 ms
1.0 kHz
12 V
100
AMPLITUDE
0-10 AMPS
CURRENT
ADJUST
http://onsemi.com
V
CC
6
2N2222
12 Vdc
1000
CARBON
900
800
700
600
500
400
300
200
100
100
0
0
2N6277
10
Figure 12. Typical Capacitance
+150 V, 10 mAdc
2.0 kW
1.0 CARBON
D.U.T.
1N5817
V
R
, REVERSE VOLTAGE (VOLTS)
20
+
4.0 mF
30
40
T
f = 1 MHz
J
= 25°C
50