MBR2045CTG ON Semiconductor, MBR2045CTG Datasheet - Page 2
![DIODE SCHOTTKY 45V 10A TO220AB](/photos/5/30/53087/488-to-220ab_sml.jpg)
MBR2045CTG
Manufacturer Part Number
MBR2045CTG
Description
DIODE SCHOTTKY 45V 10A TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Specifications of MBR2045CTG
Voltage - Forward (vf) (max) @ If
570mV @ 10A
Current - Reverse Leakage @ Vr
100µA @ 45V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
20 A
Max Surge Current
150 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.84 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
Through Hole
Current, Forward
20 A
Current, Reverse
10.4 mA
Current, Surge
150 A
Package Type
TO-220AB
Primary Type
Schottky Barrier
Resistance, Thermal, Junction To Case
2 °C/W
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-65 to +175 °C
Voltage, Forward
0.71 V
Voltage, Reverse
45 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR2045CTGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR2045CTG
Manufacturer:
TOSHIBA
Quantity:
5 000
Part Number:
MBR2045CTG
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DEVICE ORDERING INFORMATION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Non−Repetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
MBR2045CT
MBR2045CTG
MBRF2045CTG
Maximum Thermal Resistance
Instantaneous Forward Voltage (Note 2)
Instantaneous Reverse Current (Note 2)
(MBR2045CT)
(MBRF2045CT)
(i
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
Per Device
Per Diode (T
per Diode Leg (Square Wave, 20 kHz, T
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
See Figure 13
F
F
F
= 10 Amps, T
= 20 Amps, T
= 20 Amps, T
Device Order Number
C
= 165°C)
J
J
J
= 125°C)
= 125°C)
= 25°C)
J
J
= 125°C)
= 25°C)
Characteristic
Characteristic
R
)
Rating
C
= 163°C)
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
− Junction−to−Ambient
http://onsemi.com
Package Type
TO−220FP
(Pb−Free)
(Pb−Free)
TO−220
TO−220
2
Symbol
v
i
R
F
Symbol
Symbol
V
V
I
I
dv/dt
R
R
R
R
I
I
F(AV)
FRM
RRM
T
RWM
FSM
RRM
V
T
qJC
qJA
qJC
qJA
stg
R
J
Min
−
−
−
−
−
D
/dT
J
< 1/R
−65 to +175
−65 to +175
0.50
0.67
0.71
10.4
0.02
Typ
qJA
10,000
50 Units / Rail
50 Units / Rail
50 Units / Rail
Value
Value
4.75
150
1.0
2.0
Shipping
45
20
10
20
60
75
.
Max
0.57
0.72
0.84
†
0.1
15
°C/W
Unit
V/ms
Unit
°C
°C
V
A
A
A
A
Unit
mA
V