MBR2045CTG ON Semiconductor, MBR2045CTG Datasheet - Page 2

• Manufacturer Part Number: MBR2045CTG
• Description: DIODE SCHOTTKY 45V 10A TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR2045CTG

• Voltage - Forward (vf) (max) @ If: 570mV @ 10A
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 20 A
• Max Surge Current: 150 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.84 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Current, Forward: 20 A
• Current, Reverse: 10.4 mA
• Current, Surge: 150 A
• Package Type: TO-220AB
• Primary Type: Schottky Barrier
• Resistance, Thermal, Junction To Case: 2 °C/W
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -65 to +175 °C
• Voltage, Forward: 0.71 V
• Voltage, Reverse: 45 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBR2045CTGOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DEVICE ORDERING INFORMATION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Non−Repetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
MBR2045CT
MBR2045CTG
MBRF2045CTG
Maximum Thermal Resistance
Instantaneous Forward Voltage (Note 2)
Instantaneous Reverse Current (Note 2)
(MBR2045CT)
(MBRF2045CT)
(i
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
Per Device
Per Diode (T
per Diode Leg (Square Wave, 20 kHz, T
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
See Figure 13
F
F
F
= 10 Amps, T
= 20 Amps, T
= 20 Amps, T
Device Order Number
C
= 165°C)
J
J
J
= 125°C)
= 125°C)
= 25°C)
J
J
= 125°C)
= 25°C)
Characteristic
Characteristic
R
)
Rating
C
= 163°C)
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
− Junction−to−Ambient
http://onsemi.com
Package Type
TO−220FP
(Pb−Free)
(Pb−Free)
TO−220
TO−220
2
Symbol
v
i
R
F
Symbol
Symbol
V
V
I
I
dv/dt
R
R
R
R
I
I
F(AV)
FRM
RRM
T
RWM
FSM
RRM
V
T
qJC
qJA
qJC
qJA
stg
R
J
Min
−
−
−
−
−
D
/dT
J
< 1/R
−65 to +175
−65 to +175
0.50
0.67
0.71
10.4
0.02
Typ
qJA
10,000
50 Units / Rail
50 Units / Rail
50 Units / Rail
Value
Value
4.75
150
1.0
2.0
Shipping
45
20
10
20
60
75
.
Max
0.57
0.72
0.84
†
0.1
15
°C/W
Unit
V/ms
Unit
°C
°C
V
A
A
A
A
Unit
mA
V