BYV32EB-200,118 NXP Semiconductors, BYV32EB-200,118 Datasheet - Page 7
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BYV32EB-200,118
Manufacturer Part Number
BYV32EB-200,118
Description
DIODE RECT UFAST 200V D2PAK
Manufacturer
NXP Semiconductors
Datasheet
1.BYV32EB-200118.pdf
(9 pages)
Specifications of BYV32EB-200,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Voltage - Forward (vf) (max) @ If
1.15V @ 20A
Current - Reverse Leakage @ Vr
30µA @ 200V
Current - Average Rectified (io) (per Diode)
20A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.15 V
Recovery Time
25 ns
Forward Continuous Current
20 A
Max Surge Current
137 A
Reverse Current Ir
30 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3436-2
934041010118
BYV32EB-200 /T3
934041010118
BYV32EB-200 /T3
NXP Semiconductors
8. Revision history
Table 7.
BYV32EB-200_4
Product data sheet
Document ID
BYV32EB-200_4
Modifications:
BYV32E_SERIES_3
BYV32E_SERIES_2
BYV32EB_SERIES_1
Revision history
Release date
20090302
20010301
19980701
19960801
•
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Package outline updated.
Type number BYV32EB-200 separated from data sheet BYV32E_SERIES_3
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Rev. 04 — 2 March 2009
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Change notice
-
-
-
-
BYV32EB-200
Supersedes
BYV32E_SERIES_3
BYV32E_SERIES_2
BYV32EB_SERIES_1
-
© NXP B.V. 2009. All rights reserved.
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