BYV32EB-200,118 NXP Semiconductors, BYV32EB-200,118 Datasheet - Page 4
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BYV32EB-200,118
Manufacturer Part Number
BYV32EB-200,118
Description
DIODE RECT UFAST 200V D2PAK
Manufacturer
NXP Semiconductors
Datasheet
1.BYV32EB-200118.pdf
(9 pages)
Specifications of BYV32EB-200,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Voltage - Forward (vf) (max) @ If
1.15V @ 20A
Current - Reverse Leakage @ Vr
30µA @ 200V
Current - Average Rectified (io) (per Diode)
20A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.15 V
Recovery Time
25 ns
Forward Continuous Current
20 A
Max Surge Current
137 A
Reverse Current Ir
30 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3436-2
934041010118
BYV32EB-200 /T3
934041010118
BYV32EB-200 /T3
NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Characteristics
Table 6.
BYV32EB-200_4
Product data sheet
Symbol
R
R
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
V
R
rr
Fig 3.
F
FR
th(j-mb)
th(j-a)
r
Transient thermal impedance from junction to mounting base as a function of pulse width
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
forward recovery
voltage
Z
(K/W)
th(j-mb)
10
10
10
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode; see
Figure 3
minimum footprint FR4 board
Conditions
I
I
V
V
I
I
ramp recovery; T
I
current = 0.25 A; step recovery; T
see
I
F
F
F
F
F
F
10
−1
−2
−3
R
R
1
10
= 8 A; T
= 20 A; T
= 2 A; V
= 1 A; V
= 0.5 A; I
= 1 A; dI
= 200 V; T
= 200 V; T
−6
Figure 6
10
−5
j
R
R
F
= 150 °C; see
R
j
/dt = 10 A/µs; see
= 30 V; dI
= 30 V; dI
= 25 °C
Rev. 04 — 2 March 2009
= 1 A; measured at reverse
10
j
j
= 25 °C
= 100 °C
−4
j
= 25 °C; see
10
−3
F
F
/dt = 20 A/µs
/dt = 100 A/µs;
10
Figure 4
P
−2
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Figure 7
10
t
Figure 5
p
j
−1
T
= 25 °C;
003aac980
δ =
1
t
p
T
(s)
t
t
p
10
Min
-
-
-
Min
-
-
-
-
-
-
-
-
BYV32EB-200
Typ
-
-
50
Typ
0.72
1
6
0.2
8
20
10
-
© NXP B.V. 2009. All rights reserved.
Max
1.6
2.4
-
Max
0.85
1.15
30
0.6
12.5
25
20
1
Unit
K/W
K/W
K/W
Unit
V
V
µA
mA
nC
ns
ns
V
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