STPS40L45CT STMicroelectronics, STPS40L45CT Datasheet - Page 3

• Manufacturer Part Number: STPS40L45CT
• Description: DIODE SCHOTTKY 45V 20A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STPS40L45CT

• Voltage - Forward (vf) (max) @ If: 530mV @ 20A
• Current - Reverse Leakage @ Vr: 600µA @ 45V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-7567-5; STPS40L45CT

Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
250
225
200
175
150
125
100
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
0.01
75
50
25
0.1
1E-3
0
0.01
1
IM(A)
P
0
IR(mA)
P
ARM
I
M
ARM p
(1µs)
5
(t )
=0.5
t
0.1
10
1E-2
15
1
t (µs)
20
p
t(s)
VR(V)
Tj=150°C
Tj=125°C
Tj=25°C
Tj=75°C
25
10
1E-1
30
35
100
Tc=25°C
Tc=125°C
Tc=75°C
40
1E+0
1000
45
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10.0
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
0.8
0.6
0.4
0.2
0.0
1.0
1
0
0.1
1E-4
0
P
Zth(j-c)/Rth(j-c)
P
ARM
1
Single pulse
= 0.5
= 0.2
= 0.1
C(nF)
ARM p
(25°C)
(t )
25
1E-3
50
tp(s)
T (°C)
1E-2
j
VR(V)
75
10
STPS40L45CT/CW
100
1E-1
=tp/T
125
T
F=1MHz
Tj=25°C
tp
1E+0
100
150
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