J177 AMO NXP Semiconductors, J177 AMO Datasheet - Page 2

• Manufacturer Part Number: J177 AMO
• Description: RF JFET AMMORA FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of J177 AMO

• Configuration: Single
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: P-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: 30 V
• Maximum Drain Gate Voltage: 30 V
• Continuous Drain Current: 20 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SPT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: J177,126

NXP Semiconductors
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switches,
choppers, commutators etc. using
SMD technology. A special feature is
the interchangeability of the drain and
source connections.
PINNING
Note
1. Drain and source are
Marking codes:
QUICK REFERENCE DATA
April 1995
1 = drain
2 = source
3 = gate
174
175
176
177
Drain-source voltage
Gate-source voltage
Gate current
Total power dissipation
Drain current
Drain-source ON-resistance
P-channel silicon field-effect transistors
up to T
V
V
interchangeable.
DS
DS
: p6X
: p6W
: p6S
: p6Y
= 0,1 V; V
= 15 V; V
amb
= 25 C
GS
GS
= 0
= 0
handbook, halfpage
Fig.1 Simplified outline and symbol, SOT23.
 V
V
I
P
I
R
2
GSO
tot
DS on
G
DSS
Top view
1
DS



max.
max.
max.
max.
PMBFJ174
3
2
135
20
85
g
175
125
MAM386
PMBFJ174 to 177
70
7
300
30
30
50
Product specification
d
s
176
250
35
2
177
300 
1,5
20
V
V
mA
mW
mA
mA