PMBFJ309 T/R NXP Semiconductors, PMBFJ309 T/R Datasheet - Page 3

• Manufacturer Part Number: PMBFJ309 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ309 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PMBFJ309,215

Philips Semiconductors
6. Thermal characteristics
Table 6:
[1]
7. Static characteristics
Table 7:
T
9397 750 13403
Product data sheet
Symbol
R
Symbol
V
V
V
j
(BR)GSS
GSoff
GSS
th(j-a)
= 25 C; unless otherwise specified.
Device mounted on an FR4 printed-circuit board.
Thermal characteristics
Static characteristics
Parameter
gate-source breakdown voltage
gate-source cut-off voltage
gate-source forward voltage
Parameter
thermal resistance from junction to ambient
PMBFJ308
PMBFJ309
PMBFJ310
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
T
T
Fig 1. Power derating curve.
stg
j
tot
Limiting values
Parameter
total power dissipation
storage temperature
junction temperature
PMBFJ308; PMBFJ309; PMBFJ310
(mW)
P
Conditions
I
I
I
I
I
G
D
D
D
G
tot
400
300
200
100
Rev. 03 — 23 July 2004
= 1 A; V
= 1 A; V
= 1 A; V
= 1 A; V
= 1 mA; V
0
…continued
0
Conditions
DS
DS
DS
DS
DS
50
= 10 V
= 10 V
= 10 V
= 0 V
= 0 V
Conditions
up to T
100
N-channel silicon field-effect transistors
amb
150
= 25 C
T
amb
mbb688
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
( C)
[1]
200
Min
-
25
1
1
2
Typ
500
Typ
-
-
-
-
-
Min
-
-
65
Max Unit
-
1
Max
250
+150
150
6.5 V
4
6.5 V
Unit
K/W
V
V
V
V
Unit
mW
C
C
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