BFG310/XR T/R NXP Semiconductors, BFG310/XR T/R Datasheet - Page 2

• Manufacturer Part Number: BFG310/XR T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG310/XR T/R

• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14000 MHz
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.01 A
• Power Dissipation: 60 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG310/XR,215

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
9397 750 14244
Product data sheet
Table 1:
[1]
Table 2:
Table 3:
Table 4:
[1]
Symbol Parameter
MSG
NF
Pin
1
2
3
4
Type number
BFG310/XR
Type number
BFG310/XR
s
21
2
T
* = p: made in Hong Kong.
sp
is the temperature at the soldering point of the collector pin.
maximum stable gain
insertion power gain
noise figure
Quick reference data
Pinning
Ordering information
Marking codes
Description
collector
emitter
base
emitter
Package
Name
SC-61AA plastic surface mounted package; reverse pinning;
Rev. 01 — 2 February 2005
Description
4 leads
…continued
Conditions
I
f = 1.8 GHz; T
I
f = 1.8 GHz; T
Z
V
C
C
S
s
CE
= 5 mA; V
= 5 mA; V
=
= Z
= 3 V; f = 2 GHz
opt
L
= 50
; I
C
= 1 mA;
CE
CE
Marking code
S1*
amb
amb
= 3 V;
= 3 V;
Simplified outline
= 25 C
= 25 C;
NPN 14 GHz wideband transistor
3
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
1
4
Min
-
-
-
BFG310/XR
Typ
18
14
1
Symbol
3
Max
-
-
-
sym086
Version
SOT143R
2, 4
1
Unit
dB
dB
dB
2 of 12