NE425S01 NEC, NE425S01 Datasheet

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NE425S01

Manufacturer Part Number
NE425S01
Description
RF GaAs Super Lo Noise HJFET
Manufacturer
NEC
Datasheet
1.NE425S01.pdf (5 pages)

Specifications of NE425S01

Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
60 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Package / Case
SO-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE425S01-T1
Manufacturer:
TOSHIBA
Quantity:
22
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE425S01T1B
Manufacturer:
TI
Quantity:
2 710
FEATURES
• SUPER LOW NOISE FIGURE:
• HIGH ASSOCIATED GAIN:
• GATE LENGTH:
• GATE WIDTH: 200 m
• LOW COST PLASTIC PACKAGE
DESCRIPTION
The NE425S01 is a Hetero-Junction FET that utilizes the hetero
junction to create high mobility electrons. Its excellent low noise
and high associated gain make it suitable for DBS and other
commercial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
ELECTRICAL CHARACTERISTICS
SYMBOLS
0.60 dB TYP at 12 GHz
12.0 dB TYP at f = 12 GHz
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
V
I
I
NF
G
GS(off)
GSO
DSS
g
A 1
m
1
NOISE AMPLIFIER N-CHANNEL HJ-FET
Noise Figure, V
Associated Gain, V
Transconductance, V
Saturated Drain Current, V
Gate to Source Cutoff Voltage, V
Gate to Source Leak Current, V
0.20 m
PARAMETERS AND CONDITIONS
DS
= 2 V, I
DS
DS
PACKAGE OUTLINE
= 2 V, I
PART NUMBER
= 2 V, I
D
DS
C to KU BAND SUPER LOW
= 10 mA, f = 12 GHz
PRELIMINARY DATA SHEET
D
= 2 V, V
= 10 mA, f = 12 GHz
D
GS
DS
= 10 mA
= -3 V
= 2 V, I
GS
(T
= 0 V
A
= 25 C)
D
= 100
A
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
V
P
I
DS
D
in
UNITS
1.0
0.5
mS
mA
dB
dB
V
0
A
1
California Eastern Laboratories
Drain to Source Voltage
Drain Current
Input Power
NOISE FIGURE & ASSOCIATED
CHARACTERISTICS
2
GAIN vs. FREQUENCY
Ga
NF
Frequency, f (GHz)
10.5
MIN
-0.2
45
20
4
6
NE425S01
8
NE425S01
10
TYP
0.60
12.0
-0.7
UNITS MIN TYP MAX
S01
0.5
(T
60
60
dBm
V
I
D
mA
DS
A
V
14
= 10 mA
= 25 C)
= 2 V
20
30
24
20
16
12
8
4
10
MAX
0.80
-2.0
2
90
10
20
3
0

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NE425S01 Summary of contents

Page 1

... GATE WIDTH: 200 m • LOW COST PLASTIC PACKAGE DESCRIPTION The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications. ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Source Voltage GS I Drain Current D I Gate Current G P Total Power Dissipation T T Channel Temperature CH T Storage Temperature stg Note: 1. ...

Page 3

TYPICAL COMMON SOURCE SCATTERING PARAMETERS -.2 -.4 -.6 -. FREQUENCY S 11 (GHz) MAG ANG 0.50 0.998 -6.25 ...

Page 4

... NE425S01 NONLINEAR MODEL SCHEMATIC GATE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -0.8 RG VTOSC 0 RD ALPHA 8 RS BETA 0.103 RGMET GAMMA 0.092 KF GAMMADC 0. TNOM DELTA 1 XTI VBI 0.715 EG IS 3e-13 VTOTC N 1.22 BETATCE RIS 0 FFE RID 0 TAU 4e-12 CDS 0.13e-12 RDB ...

Page 5

... Bulk NE425S01-T1 Tape & Reel 1000 pcs./reel NE425S01-T1B Tape & Reel 4000 pcs./reel EXCLUSIVE NORTH AMERICAN AGENT FOR CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • ...

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