BLF6G22-45 /T3 NXP Semiconductors, BLF6G22-45 /T3 Datasheet - Page 4
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BLF6G22-45 /T3
Manufacturer Part Number
BLF6G22-45 /T3
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G22-45135.pdf
(10 pages)
Specifications of BLF6G22-45 /T3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G22-45,135
NXP Semiconductors
BLF6G22-45_2
Product data sheet
Fig 2.
(dB)
G
p
20
19
18
17
16
15
14
0
V
f
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
2
DS
= 2170.1 MHz.
= 28 V; I
10
G
D
p
20
Dq
= 405 mA; f
Fig 1.
30
40
1
V
One-tone CW power gain and drain efficiency as functions of load power; typical
values
= 2170 MHz;
DS
50
= 28 V; I
P
L(PEP)
001aah605
60
Dq
(W)
(dB)
G
= 405 mA; f = 2170 MHz.
70
p
Rev. 02 — 21 April 2008
22
20
18
16
14
12
60
50
40
30
20
10
0
(%)
0
D
10
Fig 3.
20
(dBc)
IMD
10
20
30
40
50
60
70
V
f
Intermodulation distortion as a function of
peak envelope load power; typical values
0
2
30
DS
= 2170.1 MHz.
= 28 V; I
10
40
20
Dq
= 405 mA; f
50
001aah604
P
G
30
D
L
p
(W)
60
Power LDMOS transistor
BLF6G22-45
40
60
50
40
30
20
10
(%)
1
D
= 2170 MHz;
50
IMD3
IMD5
IMD7
P
© NXP B.V. 2008. All rights reserved.
L(PEP)
001aah606
60
(W)
70
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