BLS2731-20 TRAY NXP Semiconductors, BLS2731-20 TRAY Datasheet - Page 5

• Manufacturer Part Number: BLS2731-20 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-20 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 270000 mW
• Package / Case: SOT-445
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS2731-20,114

Philips Semiconductors
List of components
Notes
1. American Technical Ceramics type 200A or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. American Technical Ceramics type 700A or capacitor of same quality.
1998 Nov 25
handbook, full pagewidth
C1
C2
C3
C4
Microwave power transistor
Dimensions in mm.
The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
The striplines are on double-clad printed-circuit board with Duroid dielectric (
COMPONENT
Fig.6
40
input
50
Component layout for 2.7 to 3.1 GHz class-C test circuit.
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 2
multilayer ceramic chip capacitor; note 3
Tekelec trimmer type 37281SL
30
DESCRIPTION
5
r
= 2.2); thickness = 0.38 mm.
C1
C4
30
C2
MGR730
C3
output
50
1 nF
10 pF
150 pF
0.4 to 2.5 pF
BLS2731-20
Product specification
VALUE