BLF6G22-180PN NXP Semiconductors, BLF6G22-180PN Datasheet - Page 7

• Manufacturer Part Number: BLF6G22-180PN
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 50W(Typ)
• Power Gain (typ)@vds: 17.5@32VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 10S
• Drain Source Resistance (max): 165@6.2Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27.5%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22-180PN,112

NXP Semiconductors
8. Test information
BLF6G22-180PN_22LS-180PN_3
Product data sheet
Fig 8.
input
50 Ω
See
Test circuit for operation at 2110 MHz and 2170 MHz
Table 9
All information provided in this document is subject to legal disclaimers.
C1
for list of components.
Rev. 04 — 4 March 2010
C5
C2
R1
C6
C3
C4
R2
R3
BLF6G22(LS)-180PN
C7
C8
C14
C9
C12
C15
Power LDMOS transistor
C10
C16
C11
© NXP B.V. 2010. All rights reserved.
C13
001aah639
output
50 Ω
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