BLF2043F /T3 NXP Semiconductors, BLF2043F /T3 Datasheet - Page 5

• Manufacturer Part Number: BLF2043F /T3
• Description: RF MOSFET Power RF LDMOS 10W UHF
• Manufacturer: NXP Semiconductors

Specifications of BLF2043F /T3

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 1.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-467-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF2043F,135

Philips Semiconductors
2002 Mar 05
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
f
Fig.5
V
f
(1) I
Fig.7
1
1
DS
DS
(dBc)
= 2200 MHz; f
= 2200 MHz; f
(dB)
d 3
G p
= 26 V; I
= 26 V; T
20
40
60
DQ
15
10
0
5
0
0
0
= 115 mA.
Power gain and efficiency as functions of
peak envelope load power, typical values.
Intermodulation distortion as a function of
peak envelope load power; typical values.
DQ
h
= 85 mA;
2
2
25 C;
= 2200.1 MHz.
= 2200.1 MHz.
4
4
(2) I
G p
DQ
= 55 mA.
(1)
(2)
(3)
8
8
P L (PEP) (W)
P L (PEP) (W)
(3) I
12
12
D
DQ
MGW645
MGW647
= 85 mA.
16
16
60
40
20
0
(%)
D
5
handbook, halfpage
V
f
Fig.6
1
DS
(dBc)
= 2200 MHz; f
d im
= 26 V; I
20
40
60
80
0
0
Intermodulation distortion as a function of
peak envelope load power; typical values.
DQ
= 85 mA; T
2
= 2200.1 MHz.
4
h
25 C;
8
d 3
d 5
d 7
P L (PEP) (W)
Product specification
12
BLF2043F
MGW646
16