BFG590/X T/R NXP Semiconductors, BFG590/X T/R Datasheet - Page 11

• Manufacturer Part Number: BFG590/X T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG590/X T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG590/X,215

NXP Semiconductors
Revision history
Revision history
Document ID
BFG590_X_N_4
Modifications:
BFG590_X_3
(9397 750 04346)
BFG590XR_2
BFG590XR_1
Release date
20071112
19981002
19950919
19921101
•
Fig. 1 and 2 on page 2; Figure note changed
Data sheet status
Product data sheet
Product specification
Product specification
Preliminary specification
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Change notice
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-
-
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BFG590; BFG590/X
NPN 5 GHz wideband transistors
Supersedes
BFG590_X_3
BFG590XR_2
BFG590XR_1
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Document identifier: BFG590_X_N_4
Date of release: 12 November 2007
All rights reserved.