BLF248 NXP Semiconductors, BLF248 Datasheet - Page 16

RF MOSFET Power RF DMOS 300W VHF P-P

BLF248

Manufacturer Part Number
BLF248
Description
RF MOSFET Power RF DMOS 300W VHF P-P
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF248

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.15 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-262-5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF248,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF248
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLF248
Manufacturer:
NXP
Quantity:
5 000
Part Number:
BLF248
Manufacturer:
ASI
Quantity:
20 000
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
613524/03/pp
16
Date of release:
2003 Sep 02
Fax: +31 40 27 24825
Document order number:
9397 750 11586
SCA75

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