BLF6G22LS-100 NXP Semiconductors, BLF6G22LS-100 Datasheet - Page 5

• Manufacturer Part Number: BLF6G22LS-100
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-100

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22LS-100,112

NXP Semiconductors
BLF6G22LS-100
Product data sheet
Fig 4.
(dB)
G
p
21
19
17
15
0
V
carrier spacing 10 MHz.
efficiency as functions of average load power;
typical values
2-carrier W-CDMA power gain and drain
DS
G
η
= 28 V; I
D
p
7.4 2-carrier W-CDMA
Dq
10
= 950 mA; f = 2140 MHz (± 5 MHz);
20
P
L(AV)
All information provided in this document is subject to legal disclaimers.
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36
24
12
0
(%)
η
D
Fig 5.
ACPR
IMD3
(dBc)
−35
−40
−45
−50
−55
0
V
carrier spacing 10 MHz.
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as functions of average load power; typical
values
DS
= 28 V; I
Dq
ACPR
10
IMD3
BLF6G22LS-100
= 950 mA; f = 2140 MHz (± 5 MHz);
Power LDMOS transistor
20
P
L(AV)
© NXP B.V. 2010. All rights reserved.
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