BLF6G27-10G NXP Semiconductors, BLF6G27-10G Datasheet - Page 8

• Manufacturer Part Number: BLF6G27-10G
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-10G

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 3.5A
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-10G,112

NXP Semiconductors
BLF6G27-10_BLF6G27-10G
Product data sheet
Table 9.
For test circuit, see
Component
C1, C3, C5, C7
C2
C4
C6
C8
L1
R1, R2
Fig 11. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10G
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
thickness = 0.76 mm.
See
List of components
Table 9
C1
All information provided in this document is subject to legal disclaimers.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
ferrite SMD bead
SMD resistor
Figure 10
C2
for list of components.
Rev. 3 — 28 February 2011
BLF6G27-10G
Input Rev 1
NXP
and
C3
BLF6G27-10; BLF6G27-10G
Figure
PCB1
R1
11.
C4
Value
22 pF
1.5 μF
1.6 pF
10 μF; 50 V
220 μF; 63 V
-
8.2 Ω
WiMAX power LDMOS transistor
C5
BLF6G27-10G
Output Rev 1
NXP
C6
L1
Remarks
ATC 100A
TDK
ATC 100A
TDK
Elco
Ferroxcube bead
Thin film
© NXP B.V. 2011. All rights reserved.
C7
R2
001aaj361
PCB2
r
C8
= 3.5 and
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