BFS20 T/R NXP Semiconductors, BFS20 T/R Datasheet - Page 2

• Manufacturer Part Number: BFS20 T/R
• Description: RF Bipolar Small Signal TRANS MED FREQ TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BFS20 T/R

• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 450 MHz
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 4 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFS20,215

NXP Semiconductors
FEATURES
• I
• V
• Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
• IF and VHF thick and thin-film circuit applications.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Feb 05
BFS20
BFS20
V
V
V
I
I
P
T
T
T
NUMBER
SYMBOL
C
CM
stg
j
amb
CBO
CEO
EBO
tot
NPN medium frequency transistor
C(max)
TYPE
CEO(max)
* = t : Made in Malaysia.
* = W : Made in China.
TYPE NUMBER
= 25 mA
= 20 V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
−
PARAMETER
MARKING CODE
plastic surface mounted package; 3 leads
G1*
open emitter
open base
open collector
T
(1)
amb
≤ 25 °C; note 1
DESCRIPTION
2
CONDITIONS
PACKAGE
PINNING
handbook, halfpage
Fig.1 Simplified outline (SOT23) and symbol.
Top view
PIN
1
2
3
1
3
base
emitter
collector
−
−
−
−
−
−
−65
−
−65
MIN.
2
DESCRIPTION
MAM255
30
20
4
25
25
250
+150
150
+150
MAX.
Product data sheet
1
VERSION
SOT23
BFS20
3
2
V
V
V
mA
mA
mW
°C
°C
°C
UNIT