SD4590 STMicroelectronics, SD4590 Datasheet

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SD4590

Manufacturer Part Number

SD4590

Description

RF Bipolar Power 800-960MHz Power

Manufacturer

STMicroelectronics

Datasheets

1.SD4590.pdf (8 pages)

2.SD4590.pdf (8 pages)

Specifications of SD4590

Dc Collector/base Gain Hfe Min

25

Maximum Operating Temperature

+ 200 C

Mounting Style

SMD/SMT

Transistor Polarity

NPN

Configuration

Single

Maximum Operating Frequency

960 MHz

Collector- Emitter Voltage Vceo Max

28 V

Emitter- Base Voltage Vebo

3.5 V

Continuous Collector Current

25 A

Maximum Dc Collector Current

25 A

Power Dissipation

300 W

Package / Case

M208

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SD4590

Manufacturer:

NXP

Quantity:

230

Company:

BOSTOCK HK LIMITED

BOSTOCK HK LIMITED

Part Number:

SD4590

Manufacturer:

ST

0

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SD4590

Manufacturer:

ST

Quantity:

20 000

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DESCRIPTION

The SD4590 is designed for both analog and

digital cellular base stations over the 800 to 960

MHz frequency range, specifically those systems

requiring the high linearity and efficiency afforded

by class AB operation. Integrated input/output

pre-matching

Ruggedness, MTTF, and linearity are enhanced

using

refractory/gold metallization.

ABSOLUTE MAXIMUM RATINGS (T

THERMAL DATA

March 2000

Symbol

GOLD METALLIZATION

DIFFUSED EMITTER BALLASTING

INTERNAL INPUT/OUTPUT MATCHING

COMMON EMITTER CONFIGURATION

DESIGNED FOR LINEAR OPERATION HIGH

SATURATED POWER CAPABILITY 26 VOLT,

900 MHz PERFORMANCE

P

GAIN = 8.5 dB MIN.

IMD

INHERENT RUGGEDNESS:

LOAD MISMATCH TOLERANCE OF

5:1 MIN. VSWR

3 dB OVERDRIVE CAPABILITY

ESD SENSITIVITY, CLASS 3 (MIL STD-883D

METHOD 3015)

P

R

V

V

V

T

OUT

DI SS

th (j-c)

CBO

CEO

EBO

I

T

STG

C

j

3

=150 W MIN.

= -28dB MAX. @ P

diffused

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

Power Dissipation

Max. O perating Junction Temperature

Storage Temperature

Junction-Case Thermal Resistance

simplifies

emitter

OUT

800-960 MHz CELLULAR BASE STATION

Parameter

amplifier

= 150W PEP

resistors

case

design.

= 25

and

o

C)

RF POWER TRANSISTORS

ORDER CODE

SD4590

1. Collector

2. Emitter

PIN CONNECTION

-65 to 150

epoxy sealed

Value

300

200

3.5

65

28

25

M208

0.60

3.Base

BRANDING

SD4590

SD4590

o

Uni t

C/W

o

o

W

V

V

V

A

C

C

1/8

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